vapor epitaxy - ορισμός. Τι είναι το vapor epitaxy
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Τι (ποιος) είναι vapor epitaxy - ορισμός

METHOD OF PRODUCING THIN FILMS (POLYCRYSTALLINE AND SINGLE CRYSTAL)
MOCVD; MOVPE; OMVPE; Metal organic chemical vapor deposition; Metalorganic chemical vapor deposition; Metalorganic vapor phase epitaxy; Metalorganic chemical vapour deposition; Organometallic vapour phase epitaxy; Metalorganic vapour phase epitaxy; Metalorganic vapor-phase epitaxy

vapour pressure         
  • alcohol]] and is closed with a piece of cork. By heating the alcohol, the vapors fill in the space, increasing the pressure in the tube to the point of the cork popping out.
  • ionized]] [[particles]] form [[condensation]] tracks when passing through.
PRESSURE EXTERTED BY A VAPOR IN THERMODYNAMIC EQUILIBRIUM
Vapour Pressure; Saturation pressure; Saturation vapor pressure; Saturation Pressure; Equilibrium vapor pressure; Vapor Pressure; Saturation vapour pressure; Saturation Vapour Pressure; Saturated vapor pressure; Saturated vapour pressure; Vapor pressures; Equilibrium Vapor Pressure; Vapour pressure; Saturated vapor; Steam pressure; Saturated vapour
¦ noun Chemistry the pressure of a vapour in contact with its liquid or solid form.
Vapor pressure         
  • alcohol]] and is closed with a piece of cork. By heating the alcohol, the vapors fill in the space, increasing the pressure in the tube to the point of the cork popping out.
  • ionized]] [[particles]] form [[condensation]] tracks when passing through.
PRESSURE EXTERTED BY A VAPOR IN THERMODYNAMIC EQUILIBRIUM
Vapour Pressure; Saturation pressure; Saturation vapor pressure; Saturation Pressure; Equilibrium vapor pressure; Vapor Pressure; Saturation vapour pressure; Saturation Vapour Pressure; Saturated vapor pressure; Saturated vapour pressure; Vapor pressures; Equilibrium Vapor Pressure; Vapour pressure; Saturated vapor; Steam pressure; Saturated vapour
·add. ·- ·Alt. of Vapor tension.
Vapor pressure         
  • alcohol]] and is closed with a piece of cork. By heating the alcohol, the vapors fill in the space, increasing the pressure in the tube to the point of the cork popping out.
  • ionized]] [[particles]] form [[condensation]] tracks when passing through.
PRESSURE EXTERTED BY A VAPOR IN THERMODYNAMIC EQUILIBRIUM
Vapour Pressure; Saturation pressure; Saturation vapor pressure; Saturation Pressure; Equilibrium vapor pressure; Vapor Pressure; Saturation vapour pressure; Saturation Vapour Pressure; Saturated vapor pressure; Saturated vapour pressure; Vapor pressures; Equilibrium Vapor Pressure; Vapour pressure; Saturated vapor; Steam pressure; Saturated vapour
Vapor pressure (or vapour pressure in English-speaking countries other than the US; see spelling differences) or equilibrium vapor pressure is defined as the pressure exerted by a vapor in thermodynamic equilibrium with its condensed phases (solid or liquid) at a given temperature in a closed system. The equilibrium vapor pressure is an indication of a liquid's evaporation rate.

Βικιπαίδεια

Metalorganic vapour-phase epitaxy

Metalorganic vapour-phase epitaxy (MOVPE), also known as organometallic vapour-phase epitaxy (OMVPE) or metalorganic chemical vapour deposition (MOCVD), is a chemical vapour deposition method used to produce single- or polycrystalline thin films. It is a process for growing crystalline layers to create complex semiconductor multilayer structures. In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr). As such, this technique is preferred for the formation of devices incorporating thermodynamically metastable alloys, and it has become a major process in the manufacture of optoelectronics, such as Light-emitting diodes. It was invented in 1968 at North American Aviation (later Rockwell International) Science Center by Harold M. Manasevit.